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EG27517
Chip Features Low-cost gate driver devices provide a high-quality alternative to NPN and PNP discrete solutions VDD voltage range 4V-20V Output current capability IO+/- 4A/4A Short input-output delay When the input pin is floating, the output remains low Few peripheral devices Small static current, ideal for battery applications Package: SOT23-5 Lead-free and environmentally friendly, RoHS compliant.
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- Product Description
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- Commodity name: EG27517
- 封装: SOT23-5
- 品牌: EG/Yi Jing Wei
Chip Features Low-cost gate driver devices provide a high-quality alternative to NPN and PNP discrete solutions VDD voltage range 4V-20V Output current capability IO+/- 4A/4A Short input-output delay When the input pin is floating, the output remains low Few peripheral devices Small static current, ideal for battery applications Package: SOT23-5 Lead-free and environmentally friendly, RoHS compliant.
Chip Description
The EG27517 is a single-channel, high-speed, low-side gate driver that can effectively drive metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs) power switches. It provides high peak sink/source current pulses for capacitive loads, while offering rail-to-rail drive capability and short propagation delay. The EG27517 has a wide supply voltage range of 4V～20V and low static power consumption. This chip features a dual-input design (selectable inverting IN- or non-inverting IN+ driver configuration). When VDD = 12V, the EG27517 can provide a peak sink/source (symmetrical drive) current drive capability of 4A; it is packaged in a SOT23-5 package.
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