EG3012S
Chip Features High-end floating self-lifting power supply design, withstand voltage up to 80V Built-in dead-zone control circuit Undervoltage lockout of power supply voltage output Built-in interlock function, completely eliminating simultaneous conduction of upper and lower tube outputs Half-bridge Darlington tube output structure with large current gate drive capability Specifically for brushless motor N-channel MOS tube, IGBT gate drive HIN input channel high level effective, control high-end HO output LIN input channel high level effective, control low-end LO output Few external components Small static current: 4.5mA Package: SOP-8
Category:
- Product Description
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- Commodity name: EG3012S
- 封装: SOP-8
- 品牌: EG Yijing Micro
Chip Features High-end floating self-lifting power supply design, withstand voltage up to 80V Built-in dead-zone control circuit Undervoltage lockout of power supply voltage output Built-in interlock function, completely eliminating simultaneous conduction of upper and lower tube outputs Half-bridge Darlington tube output structure with large current gate drive capability Specifically for brushless motor N-channel MOS tube, IGBT gate drive HIN input channel high level effective, control high-end HO output LIN input channel high level effective, control low-end LO output Few external components Small static current: 4.5mA Package: SOP-8
Chip Description
The EG3012S is a cost-effective, high-power MOS tube and IGBT gate drive chip. It integrates logic signal input processing circuits, dead-time control circuits, undervoltage shutdown circuits, interlock circuits, level shift circuits, pulse filtering circuits, and output drive circuits. It is specifically designed for drive circuits in brushless motor controllers.
The EG3012S has a high operating voltage of up to 80V and a wide Vcc power supply voltage range of 11V~30V, with a low static power consumption of only 4.5mA. The chip has an interlock function to prevent simultaneous conduction of the output power tubes. The input channels HIN and LIN have a built-in 10K pull-down resistor, which keeps the upper and lower power MOS tubes off when the input is floating. The output structure uses a half-bridge Darlington structure and comes in an SOP8 package.
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