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SP09N03SC33

It is a high-cell-density trench N-channel MOSFET that provides excellent R<sub>DSON</sub> and gate charge for most synchronous buck converter applications.


  • Product Description
    • Commodity name: SP09N03SC33
    • 封装: DFN3*3
    • 品牌: Wuxi Silicon Power Microelectronics

    It is a high-cell-density trench N-channel MOSFET that provides excellent R<sub>DSON</sub> and gate charge for most synchronous buck converter applications.

    The SP09N03SC33 is a high-cell-density trench N-channel MOSFET that provides excellent RDSON and gate charge for most synchronous buck converter applications.
    The SP09N03SC33 complies with RoHS and green product requirements, with 100% EAS assurance and full functionality reliability.

     

    Features

    ● VDS=30V,ID=45A
    ● RDS(ON)=10mΩ (typical) @VGS=4.5V
    ● RDS(ON)=7mΩ (typical) @VGS=10V
    ● Low total gate charge
    ● Low reverse transfer capacitance
    ● Improved dv/dt capability
    ● Fast switching speed
    ● Lead-free product available
    ● DFN8L-3×3 package

     

     

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